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TDE1897RDP датащи(PDF) 5 Page - STMicroelectronics

номер детали TDE1897RDP
подробное описание детали  0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH
PDF  12 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

TDE1897RDP датащи(HTML) 5 Page - STMicroelectronics

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APPLICATION INFORMATION
DEMAGNETIZATION OF INDUCTIVE LOADS
An internal zener diode, limiting the voltage
across the Power MOS to between 45 and 55V
(Vcl), provides safe and fast demagnetization of
inductive loads without external clamping devices.
The maximum energy that can be absorbed from
an inductive load is specified as 200mJ (at
Tj =85
°C).
To define the maximum switching frequency three
points have to be considered:
1) The total power dissipation is the sum of the
On State Power and of the Demagnetization
Energy multiplied by the frequency.
2)
The total energy W dissipated in the device
during a demagnetization cycle (figg. 2, 3) is:
W
= Vcl
L
RL
Io –
Vcl –Vs
RL
log
1
+
Vs
Vcl –Vs

Where:
Vcl = clamp voltage;
L = inductive load;
RL = resistive load;
Vs = supply voltage;
IO =ILOAD
3)
In normal conditions the operating Junction
temperature should remain below 125
°C.
Figure 2: Inductive Load Equivalent Circuit
Figure 3: Demagnetization Cycle Waveforms
-25
0
25
50
75
100
125
Tj (
°C)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
α
D93IN018
α=
RDSON (Tj)
RDSON (Tj=25
°C)
Figure 4: Normalized RDSON vs. Junction
Temperature
TDE1897R - TDE1898R
5/12



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