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TSDF1220 датащи(PDF) 2 Page - Vishay Siliconix

номер детали TSDF1220
подробное описание детали  12 GHz Silicon NPN Planar RF Transistor
PDF  7 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSDF1220 датащи(HTML) 2 Page - Vishay Siliconix

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Document Number 85066
Rev. 1.8, 08-Sep-08
TSDF1220 / 1220R / 1220W / 1220RW
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Maximum Thermal Resistance
1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35
μm Cu
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Collector-base voltage
VCBO
9V
Collector-emitter voltage
VCEO
6V
Emitter-base voltage
VEBO
2V
Collector current
IC
40
mA
Total power dissipation
Tamb ≤ 60 °C
Ptot
200
mW
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Parameter
Test condition
Symbol
Value
Unit
Junction to ambient air
1)
RthJA
450
K/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter cut-off current
VCE = 12 V, VBE = 0
ICES
100
μA
Collector-base cut-off current
VCB = 10 V, IE = 0
ICBO
100
nA
Emitter-base cut-off current
VEB = 1 V, IC = 0
IEBO
2
μA
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
V(BR)CEO
6V
Collector-emitter saturation
voltage
IC = 30 mA, IB = 3 mA
VCEsat
0.1
0.5
V
DC forward current transfer ratio VCE = 5 V, IC = 20 mA
hFE
50
100
150
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
VCE = 5 V, IC = 20 mA, f = 1 GHz
fT
12
GHz
Collector-base capacitance
VCB = 1 V, f = 1 MHz
Ccb
0.3
pF
Collector-emitter capacitance
VCE = 1 V, f = 1 MHz
Cce
0.35
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
0.5
pF
Noise figure
VCE = 5 V, IC = 3 mA, ZS = ZSopt,
ZL = 50 Ω, f = 2 GHz
F1.2
dB
Power gain
VCE = 5 V, IC = 20 mA, ZS =
ZSopt, ZL = 50 Ω, f = 2 GHz
Gpe
14
dB
Transducer gain
VCE = 5 V, IC = 20 mA,
Z0 = 50 Ω, f = 2 GHz
|S21e|
2
12.5
dB
Third order intercept point at
output
VCE = 5 V, IC = 20 mA, f = 2 GHz
IP3
22
dBm



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