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FEP6CT датащи(PDF) 3 Page - Vishay Siliconix |
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FEP6CT датащи(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() FEP(F,B)6AT thru FEP(F,B)6DT Vishay General Semiconductor Document Number: 88598 Revision: 07-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Figure 1. Maximum Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current Per Diode Figure 3. Typical Instantaneous Forward Characteristics Per Diode 0 6 8 10 75 50 25 0 100 125 150 4 2 Resistive or Inductive Load Case Temperature (°C) 0 50 1 100 10 40 30 20 80 70 60 10 Number of Cycles at 60 Hz 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) 0.1 10 100 1 1.8 T J = 125 °C T J = 25 °C Pulse Width = 300 µs 1 % Duty Cycle Figure 4. Typical Reverse Leakage Characteristics Per Diode Figure 5. Typical Junction Capacitance Per Diode 60 40 20 0 100 80 0.01 0.1 10 1 100 Percent of Rated Peak Reverse Voltage (%) T J = 100 °C T J = 125 °C T J = 25 °C Reverse Voltage (V) 0.1 10 1 100 30 20 10 40 50 60 0 T J = 25 °C f = 1.0 MHz V sig = 50 mVp-p |
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