FEP(F,B)16AT thru FEP(F,B)16JT

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88596

Revision: 07-Nov-07

2

Note:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

Note:

(1) Automotive grade AEC Q101 qualified

PARAMETER

TEST CONDITIONS

SYMBOL

FEP

16AT

FEP

16BT

FEP

16CT

FEP

16DT

FEP

16FT

FEP

16GT

FEP

16HT

FEP

16JT

UNIT

Maximum instantaneous

8.0 A

0.95

1.30

1.50

V

Maximum DC reverse current

per diode at rated DC

blocking voltage

10

500

µA

Maximum reverse recovery

time per diode

35

50

ns

Typical junction capacitance

per diode

4.0 V, 1 MHz

85

60

pF

PARAMETER

SYMBOL

FEP

FEPF

FEPB

UNIT

Typical thermal resistance from junction to case per diode

2.2

3.1

2.2

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

FEP16JT-E3/45

1.85

45

50/tube

Tube

ITO-220AB

FEPF16JT-E3/45

1.97

45

50/tube

Tube

TO-263AB

FEPB16JT-E3/45

1.35

45

50/tube

Tube

TO-263AB

FEPB16JT-E3/81

1.35

81

800/reel

Tape and reel

TO-220AB

1.85

45

50/tube

Tube

ITO-220AB

1.97

45

50/tube

Tube

TO-263AB

1.35

45

50/tube

Tube

TO-263AB

1.35

81

800/reel

Tape and reel