Document Number: 91320

www.vishay.com

S-81366-Rev. A, 07-Jul-08

1

Power MOSFET

IRLL110, SiHLL110

Vishay Siliconix

FEATURES

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Logic-Level Gate Drive

• Fast Switching

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effictiveness.

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performace due to

an enlarged tab for heatsinking. Power dissipation of greater

than 1.25 W is possible in a typical surface mount

application.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

100

0.54

6.1

2.6

3.3

Configuration

Single

N-Channel MOSFET

G

D

S

SOT-223

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

SOT-223

SOT-223

Lead (Pb)-free

IRLL110PbF

SiHLL110-E3

SnPb

IRLL110

SiHLL110

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

± 10

Continuous Drain Current

1.5

A

0.93

12

Linear Derating Factor

0.025

W/°C

0.017

50

mJ

1.5

A

0.31

mJ

Maximum Power Dissipation

3.1

W

2.0

dV/dt

5.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

* Pb containing terminations are not RoHS compliant, exemptions may apply