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BA779 датащи(PDF) 2 Page - Vishay Siliconix

номер детали BA779
подробное описание детали  RF PIN Diodes - Single in SOT23
PDF  5 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BA779 датащи(HTML) 2 Page - Vishay Siliconix

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Document Number 85532
Rev. 1.7, 19-Feb-07
BA779/BA779S
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 20 mA
VF
1000
mV
Reverse current
VR = 30 V
IR
50
nA
Diode capacitance
f = 100 MHz, VR = 0
CD
0.5
pF
Differential forward resistance
f = 100 MHz, IF = 1.5 mA
rf
50
Ω
Reverse impedance
f = 100 MHz, VR = 0
BA779
zr
5k
Ω
BA779S
zr
9k
Ω
Minority carrier lifetime
IF = 10 mA, IR = 10 mA
τ
4µs
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Differential Forward Resistance vs. Forward Current
0
0.4
0.8
1.2
1.6
0.01
0.1
1
10
100
2.0
95 9735
VF - Forward Voltage (V)
Tamb = 25 °C
Scattering Limit
0.001
0.01
0.1
1
1
10
100
1000
10000
10
95 9734
IF - Forward Current (mA)
f>20MHz
Tj =25 °C
Figure 3. Typ. Cross Modulation Distortion vs. Frequency f2
- 80
- 60
- 40
- 20
0
20
f2 , modulated with 200 kHz, m = 100 % (MHz)
80
60
40
20
0
95 9733
- Circuit with 10 dB Attenuation
V0 =40dBmV
f1 = 100 MHz unmodulated
Π



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