Document Number: 91242

www.vishay.com

S-Pending-Rev. A, 17-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFPC50LC, SiHFPC50LC

Vishay Siliconix

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Isolated Central Mounting Hole

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

This new series of low charge Power MOSFETs achieve

significantly lower gate charge over conventional MOSFETs.

Utilizing advanced Power MOSFET technology the device

improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device improvements combined with the proven

ruggedness and reliability of Power MOSFETs offer the

designer a new standard in power transistors for switching

applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because its isolated mounting hole.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

600

0.60

84

18

36

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-247

Lead (Pb)-free

IRFPC50LCPbF

SiHFPC50LC-E3

SnPb

IRFPC50LC

SiHFPC50LC

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

± 30

Continuous Drain Current

11

A

7.3

44

Linear Derating Factor

1.5

W/°C

920

mJ

11

A

19

mJ

Maximum Power Dissipation

190

W

dV/dt

3.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply