08C02SS

No.8513-1/4

Applications

•

Low-frequency Amplifer, high-speed switching, DC / DC converter, muting circuit.

Features

•

Large current capacitance.

•

Low collector-to-emitter saturation voltage (resistance): RCE(sat) typ=240mΩ [IC=1A, IB=50mA].

•

Ultrasmall package facilitates miniaturization in end products.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

15

V

Collector-to-Emitter Voltage

VCEO

8V

Emitter-to-Base Voltage

VEBO

5V

Collector Current

IC

0.8

A

Collector Current (Pulse)

ICP

1.6

A

Collector Dissipation

PC

Mounted on a glass epoxy board (20!30!1.6mm)

200

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=12V, IE=0A

100

nA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

100

nA

DC Current Gain

hFE

VCE=2V, IC=50mA

300

800

Gain-Bandwidth Product

fT

VCE=2V, IC=50mA

440

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

6

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=30mA, IB=0.6mA

17

40

mV

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=400mA, IB=20mA

110

250

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=400mA, IB=20mA

0.9

1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10µA, IE=0A

15

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

8V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10µA, IC=0A

5

V

Marking : YT

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : EN8513

90505EA MS IM TA-100372

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

08C02SS

NPN Epitaxial Planar Silicon Transistor

Low-Frequency General-Purpose

Amplifier Applications