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2SC6113 датащи(PDF) 2 Page - Sanyo Semicon Device

номер детали 2SC6113
подробное описание детали  NPN Triple Diffused Planar Silicon Transistor For 14, 21 inch TV Power Supply
PDF  4 Pages
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производитель  SANYO [Sanyo Semicon Device]
домашняя страница  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6113 датащи(HTML) 2 Page - Sanyo Semicon Device

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2SC6113
No. A1155-2/4
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=500V, IE=0A
10
μA
Emitter Cutoff Current
IEBO
VEB=5V, IC=0A
10
μA
DC Current Gain
hFE1VCE=5V, IC=1.2A
40
80
hFE2VCE=5V, IC=6A
8
Gain-Bandwidth Product
fT
VCE=10V, IC=1.2A
18
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
80
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=6A, IB=1.2A
1.0
V
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=6A, IB=1.2A
1.5
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=1mA, IE=0A
1000
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=5mA, RBE=∞
500
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=1mA, IC=0A
7
V
Collector-to-Emitter Saturation Voltage
VCEX(sus)
IC=2.5A, IB1=--IB2=2A, L=1mH, clamped
500
V
Turn-ON Time
ton
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50Ω
0.5
μs
Storage Time
tstg
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50Ω
3.0
μs
Fall Time
tf
VCC=200V, 5IB1=--2.5IB2=IC=7A, RL=50Ω
0.3
μs
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7504-001
VR
RB
VCC=200V
VBE= --5V
+
+
50Ω
INPUT
OUTPUT
RL
100μF
470μF
PW=20μs
IB1
D.C.≤1%
IB2
16.0
3.4
12
3
2.0
2.8
2.1
5.45
5.45
0.7
0.9
5.6
3.1
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PMLH
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
IC -- VBE
IC -- VCE
01
3
5
7
9
0
246
8
1
2
3
5
4
6
7
8
9
10
10
0
0.5
1.0
1.5
2.0
4
6
14
12
10
8
0
2
IT13465
IT13466
VCE=5V
IB=0mA
100mA
200mA
300mA
400mA
500mA
800mA
600mA
1000mA



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