2SC6112

No. A1154-1/4

Features

•

High breakdown voltage and high reliability.

•

Ultrahigh-speed switching.

•

Wide ASO.

•

Adoption of MBIT process.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

1000

V

Collector-to-Emitter Voltage

VCEO

500

V

Emitter-to-Base Voltage

VEBO

7V

Collector Current

IC

15

A

Collector Current (Pulse)

ICP

PW≤300μs, duty cycle≤10%

25

A

Collector Dissipation

PC

1.75

W

Tc=25°C55

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=500V, IE=0A

10

μA

Emitter Cutoff Current

IEBO

VEB=5V, IC=0A

10

μA

DC Current Gain

hFE1VCE=5V, IC=1.2A

40

80

hFE2VCE=5V, IC=6A

8

Gain-Bandwidth Product

fT

VCE=10V, IC=1.2A

18

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

80

pF

Continued on next page.

Ordering number : ENA1154

40908KB TI IM TC-00001308

SANYO Semiconductors

DATA SHEET

2SC6112

NPN Triple Diffused Planar Silicon Transistor

Switching Regulator Applications

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customer

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