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STW90NF20 датащи(PDF) 3 Page - STMicroelectronics

номер детали STW90NF20
подробное описание детали  N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET??Power MOSFET
PDF  12 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STW90NF20 датащи(HTML) 3 Page - STMicroelectronics

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STW90NF20
Electrical ratings
3/12
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
200
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25 °C
83
A
ID
Drain current (continuous) at TC = 100 °C
52
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
332
A
Derating factor
2.4
W/°C
PTOT
Total dissipation at TC = 25 °C
300
W
dv/dt (2)
2.
ISD ≤ 83 A, di/dt ≤ 400 A/µs, VDD ≤ 80% V(BR)DSS
Peak diode recovery voltage slope
15
V/ns
TJ
Tstg
Operating junction temperature
Storage temperature
-50 to 150
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
0.42
°C/W
Rthj-amb
Thermal resistance junction-ambient max
50
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
83
A
EAS
Single pulse avalanche energy
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)
400
mJ



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