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STW75NF30 датащи(PDF) 5 Page - STMicroelectronics

номер детали STW75NF30
подробное описание детали  N-channel 300 V, 0.037 Ω, 60 A, TO-247 low gate charge STripFET??Power MOSFET
PDF  12 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW75NF30 датащи(HTML) 5 Page - STMicroelectronics

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STW75NF30
Electrical characteristics
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Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 150 V, ID = 30 A
RG = 4.7 Ω, VGS = 10 V,
(see Figure 14)
115
87
141
101
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse with limited by maximum temperature
Source-drain current
Source-drain current
(pulsed)
60
240
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward on voltage
ISD = 60 A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 60 A,VDD = 60 V
di/dt = 100 A/µs
(see Figure 19)
252
2.5
20
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD =60 A, VDD = 60 V
di/dt = 100 A/µs
Tj = 150°C (see Figure 19)
316
3.7
23.2
ns
µC
A



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