STP130NH02L datasheet(4/14 Pages) STMICROELECTRONICS

номер детали	STP130NH02L

подробное описание детали	N-channel 24V - 0.0034Ω - 120A - TO-220 STripFET™Power MOSFET for DC-DC conversion

PDF	14 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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4 / 14 page

Electrical characteristics

STP130NH02L

4/14

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 25mA

VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

TC=125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

100

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V , ID = 45A

VGS = 5V, ID = 22.5A

0.0034

0.005

0.0044

0.008

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance VDS = 10V, ID = 45A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 15V, f = 1MHz,

VGS = 0

4450

1126

141

td(on)

td(off)

Turn-on delay time

Rise time

Off voltage rise time

Fall time

VDD = 10V, ID = 45A,

RG = 4.7Ω, VGS = 10V

(see Figure 13)

224

Gate input resistance

f = 1MHz gate DC bias=0

test signal level=20mV

open drain

1.6

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=10V, ID = 90A

VGS =10V

(see Figure 14)

Qoss

(2)

Qoss = Coss*

∆V

IN, Coss = Cgd + Cds. See power losses calculation

Output charge

VDS = 16V, VGS = 0

Qgls

(3)

Gate charge for synchronous operation.

Third-quadrant gate

charge

VDS < 0, VGS= 10V

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