STN951 datasheet(4/8 Pages) STMICROELECTRONICS

номер детали	STN951

подробное описание детали	Low voltage fast-switching PNP power transistor

PDF	8 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STN951

4/8

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE =0)

VCB = -60 V

-0.1

µA

IEBO

Emitter cut-off current

(IC =0)

VEB = -5 V

-0.1

µA

V(BR)CBO

(1)

Pulse duration = 300 µs, duty cycle

≤ 2 %

Collector-base

Breakdown voltage

(IE =0)

IC = -100 µA

-60

V(BR)CEO

(1)

Collector-emitter

Breakdown voltage

(IB =0)

IC = -10 mA

-60

V(BR)EBO

(1)

Emitter-base Breakdown

voltage (IC =0)

IE = -100 µA

-6

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = -100 mA IB = -5 mA

IC = -1 A

IB = -50 mA

IC = -2 A

IB = -50 mA

IC = -5 A

IB = -200 mA

-10

-70

-140

-350

-50

-120

-250

-500

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = -4 A

IB = -200 mA

-1

-1.15

VBE(on)

(1)

Base-emitter on voltage

IC = -4 A

VCE = -1 V

-0.89

-1

hFE

(1)

DC current gain

IC = -10 mA

VCE = -1 V

IC = -2 A

VCE = -1 V

IC = -5 A

VCE = -1 V

IC = -10 A

VCE = -1 V

150

300

270

350

Transition frequency

VCE = -10 V

IC = -100 mA

130

MHz

CCBO

Collector-base

capacitance (IE =0)

VCB = -10 V

f = 1 MHz

ton

Resistive load

Turn-on time

Storage time

Fall time

IC = -1 A

VCC = -30 V

IB1 = - IB2 = -0.1 A

600

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