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L55NH3LL датащи(PDF) 5 Page - STMicroelectronics

номер детали L55NH3LL
подробное описание детали  N-channel 30 V, 0.0079 Ω, 15 A, PowerFLAT??(6x5) ultra low gate charge STripFET™Power MOSFET
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L55NH3LL датащи(HTML) 5 Page - STMicroelectronics

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Electrical characteristics
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Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD=15 V, ID= 7.5 A,
RG=4.7 Ω, VGS=4.5 V
(see Figure 18)
15
32
18
8.5
ns
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
15
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
60
A
VSD
(2)
2.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward on voltage
ISD=15 A, VGS=0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=15 A,
di/dt = 100 A/µs,
VDD=20 V, Tj=150 °C
(see Figure 17)
24
17.4
1.45
ns
nC
A



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