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STP85N3LH5 датащи(PDF) 3 Page - STMicroelectronics

номер детали STP85N3LH5
подробное описание детали  N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET??V Power MOSFET
PDF  16 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STP85N3LH5 датащи(HTML) 3 Page - STMicroelectronics

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STD85N3LH5 - STP85N3LH5 - STU85N3LH5
Electrical ratings
3/16
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
30
V
VDS
Drain-source voltage (VGS = 0) @ TJMAX
35
V
VGS
Gate-source voltage
± 22
V
ID
(1)
1.
Limited by wire bonding
Drain current (continuous) at TC = 25 °C
80
A
ID
Drain current (continuous) at TC = 100 °C
55
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25 °C
70
W
Derating factor
0.47
W/°C
EAS
(3)
3.
Starting Tj = 25°C, ID = 40 A, VDD = 25 V
Single pulse avalanche energy
165
mJ
Tstg
Storage temperature
-55 to 175
°C
Tj
Max. operating junction temperature
175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
2.14
°C/W
Rthj-amb
Thermal resistance junction-case max
100
°C/W
Tj
Maximum lead temperature for soldering purpose
275
°C



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