New Product

EDF1AS thru EDF1DS

Vishay General Semiconductor

Document Number: 88578

Revision: 30-Jan-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Forward Characteristics Per Diode

Figure 4. Typical Reverse Leakage Characteristics Per Diode

0.4

0.6

0.8

1.0

1.2

1.4

0.01

0.1

1

10

Instantaneous Forward Voltage (V)

T

Pulse Width = 300 µs

1 % Duty Cycle

0

20

40

60

80

100

0.1

1

10

100

1000

T

T

Percent of Rated Peak Reverse Voltage (%)

Figure 5. Typical Junction Capacitance Per Diode

1

0.1

10

100

1000

10

5

0

15

20

25

30

Reverse Voltage (V)

T

f = 1.0 MHz

V

Mounting Pad La yout

0.255 (6.5)

0.245 (6.2)

0.013 (0.330)

0.009 (0.241)

0.060 (1.524)

0.040 (1.016)

0.404 (10.3)

0.013 (0.330)

0.003 (0.076)

0.047 (1.20)

0.040 (1.02)

0.205 (5.2)

0.195 (5.0)

0.335 (8.51)

0.320 (8.13)

0.130 (3.3)

0.120 (3.05)

45°

0.386 (9.80)

Case Style DFS

0.404 MAX.

(10.26 MAX.)

0.205 (5.2)

0.195 (5.0)

0.047 MIN.

(1.20 MIN.)

0.060 MIN.

(1.52 MIN.)