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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STY34NB50F датащи(PDF) 1 Page - STMicroelectronics |
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STY34NB50F датащи(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  STY34NB50F N - CHANNEL 500V - 0.11 Ω - 34 A - Max247 PowerMESH ™ MOSFET s TYPICAL RDS(on) = 0.11 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s LOW INTRINSIC CAPACITANCE s GATE CHARGE MINIMIZED s REDUCED VOLTAGE SPREAD DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstand- ing performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLY (SMPS) s DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY AND MOTOR DRIVE ® INTERNAL SCHEMATIC DIAGRAM December 1999 ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value Un it VDS Drain-source Voltage (VGS =0) 500 V VDGR Drain- gat e Voltage (RGS =20 k Ω) 500 V VGS G ate-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 oC34 A ID Drain Current (continuous) at Tc = 100 oC 21.4 A IDM( •) Drain Current (pulsed) 136 A Ptot T otal Dissipat ion at Tc =25 oC450 W Derating F act or 3.61 W / o C dv/dt(1) Peak Diode Recovery voltage slope 4.5 V/ns Tstg Storage Temperature -65 to 150 o C Tj Max. O perating Junction Temperature 150 o C ( •) Pulse width limited by safe operating area ( 1)ISD ≤34 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX TYPE VDSS RDS(on) ID STY34NB50F 500 V < 0.14 Ω 34 A 1 2 3 Max247 ™ 1/8 |
Аналогичный номер детали - STY34NB50F |
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Аналогичное описание - STY34NB50F |
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