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SH7055SF датащи(PDF) 13 Page - Renesas Technology Corp |
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SH7055SF датащи(HTML) 13 Page - Renesas Technology Corp |
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13 / 1002 page ![]() Rev.2.0, 07/03, page xiii of xxxviii Item Page Revisions (See Manual for Details) 22.1 Features • Programming/erasing time • Number of programming 736 Description amended • Programming/erasing time The flash memory programming time is t P ms (typ) in 128-byte simultaneous programming and t P/128ms per byte. The erasing time is t E s (typ) per block. • Number of programming The number of flash memory programming can be up to N WEC times. 22.4.3 Programming/Erasing Interface Parameters (2) Programming/Erasing Initialization 758 Description added Line 13 The general registers R8 to R15 are stored. The general registers R0 to R7 can be used without being stored. 22.5.3 User Boot Mode (1) User Boot Mode Initiation 782 Description added Line 3 When the reset start is executed in user boot mode, the check routine for flash-memory related registers runs. While the check routine is running, the RAM area about 1.2 kbytes from H'FFFF6800 is used by the routine and 4 bytes from H'FFFFDFFC is used as a stack area. NMI and all other interrupts cannot be accepted. Neither can the AUD be used in this period. This period is approximately 100 µs while operating at an internal frequency of 40 MHz. 22.7 Flash Memory Emulation in RAM 791 Note: Description added Note: Setting the RAMS bit to 1 puts all the blocks in flash memory in the programming/erasing-protected state regardless of the values of the RAM2 to RAM0 bits (emulation protection). Clear the RAMS bit to 0 before actual programming or erasure. RAM emulation can be performed when the user boot MAT is selected. However, programming/erasing user boot MAT can be performed only in boot mode or program mode. |
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