STW8NB80

N - CHANNEL 800V - 1.2

Ω - 7.5A - TO-247

PowerMESH

™ MOSFET

PRELIMINARY DATA

s

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

Using the latest high voltage MESH OVERLAY

™

process, STMicroelectronics has designed an

advanced

family

of

power

MOSFETs

with

outstanding

performances.

The

new

patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

APPLICATIONS

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

s

HIGH CURRENT, HIGH SPEED SWITCHING

INTERNAL SCHEMATIC DIAGRAM

January 1999

1

2

3

TO-247

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

800

V

Ω)

800

V

Gate-source Voltage

± 30

V

7.5

A

4.7

A

•)

Drain Current (pulsed)

30

A

170

W

Derating Factor

1.36

W/

Peak Diode Recovery voltage slope

4

V/ns

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(

•) Pulse width limited by safe operating area

TYPE

STW8NB80

800 V

< 1.6

Ω

7.5 A

1/5