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BIC702M датащи(PDF) 4 Page - Renesas Technology Corp

номер детали BIC702M
подробное описание детали  Bias Controlled Monolithic IC VHF/UHF RF Amplifier
PDF  13 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BIC702M датащи(HTML) 4 Page - Renesas Technology Corp

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BIC702M
2
Absolute Maximum Ratings (Ta = 25
°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
6V
Gate1 to source voltage
V
G1S
+6
–0
V
Gate2 to source voltage
V
G2S
+6
–0
V
Drain current
I
D
30
mA
Channel power dissipation
Pch
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
6—
—
V
I
D = 200µA
V
G2S = 0,VG1 = open
Gate1 to source breakdown
voltage
V
(BR)G1SS
+6
—
—
V
I
G1 = +10 µA, VG2S = VDS = 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
+6
—
—
V
I
G2 = +10 µA, VG1S = VDS = 0
Gate2 to source cutoff current I
G2SS
—
—
+100
nA
V
G2S = +5V, VG1S = VDS = 0
Gate2 to source cutoff voltage V
G2S(off)
0.5
0.7
1.0
V
V
DS = 5V, ID = 100µA
V
G1 = open
Drain current
I
D(op)
10
13
16
mA
V
DS = 5V , VG2S = 4V
V
G1 = open
Forward transfer admittance
|y
fs|
2429
34mS
V
DS = 5V, ID = 13mA
V
G2S =4V, f = 1kHz
Input capacitance
c
iss
1.6
2.0
2.3
pF
V
DS = 5V, VG2S =4V
Output capacitance
c
oss
0.7
1.1
1.5
pF
V
G1 = open
Reverse transfer capacitance c
rss
—
0.02
0.05
pF
f = 1MHz
Power gain
PG1
24
28.5
—
dB
V
DS = 5V, VG2S =4V
V
G1 = open
Noise figure
NF1
—
1.0
1.5
dB
f = 200MHz
Power gain
PG2
18
23
—
dB
V
DS = 5V, VG2S =4V
V
G1 = open
Noise figure
NF2
—
1.6
2.2
dB
f = 900MHz



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