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BB503C датащи(PDF) 6 Page - Renesas Technology Corp

номер детали BB503C
подробное описание детали  Built in Biasing Circuit MOS FET IC UHF RF Amplifier
PDF  11 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BB503C датащи(HTML) 6 Page - Renesas Technology Corp

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BB503C
Rev.5.00 Aug 10, 2005 page 6 of 10
0
1
234
5
30
24
18
12
6
VDS = 5 V
RG = 47 kΩ
f = 1 kHz
0
12
3
4
5
30
24
18
12
6
VDS = 5 V
RG = 68 kΩ
f = 1 kHz
Gate1 Voltage
VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
Gate1 Voltage
VG1 (V)
Forward Transfer Admittance
vs. Gate1 Voltage
VG2S = 1 V
4 V
3 V
2 V
VG2S = 1 V
4 V
3 V
2 V
0
510
15
20
4
3
2
1
0
10
20
50
100
0
5
10
15
20
30
25
20
15
10
5
0
10
100
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50
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25
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10
5
0
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
4
3
2
1
0
VDS = VG1 = 5 V
VG2S = 4 V
RG = variable
f = 900 MHz
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz
Drain Current ID (mA)
Gate Resistance RG (kΩ)
Noise Figure vs. Gate Resistance
Gate Resistance RG (kΩ)
Power Gain vs. Gate Resistance
Drain Current ID (mA)
Power Gain vs. Drain Current
Noise Figure vs. Drain Current
VDS = VG1 = 5 V
VG2S = 4 V
f = 900 MHz



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