Rev.6.00 Apr 27, 2006 page 1 of 10

BB502C

Built in Biasing Circuit MOS FET IC

UHF RF Amplifier

REJ03G0832-0600

(Previous ADE-208-810C)

Rev.6.00

Apr 27, 2006

Features

• Built in Biasing Circuit; To reduce using parts cost & PC board space.

• Low noise; NF = 1.6 dB typ. at f = 900 MHz

• High gain; PG = 22 dB typ. at f = 900 MHz

• Withstanding to ESD;

Built in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; CMPAK-4(SOT-343mod)

Outline

RENESAS Package code: PTSP0004ZA-A

(Package name: CMPAK-4)

1. Source

2. Gate1

3. Gate2

4. Drain

1

4

3

2

Notes:

1.

Marking is “BS–”.

2.

BB502C is individual type number of RENESAS BBFET.