STVD901J

3/4

0.0

1.0

2.0

3.0

4.0

5.0

6.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

V (V)

R

C(pF)

F=1MHz

V

=30mV

T =25°C

OSC

RMS

j

Fig. 3: Junction capacitance versus reverse

voltage applied (typical values).

0.92

0.94

0.96

0.98

1.00

1.02

1.04

1.06

1.08

1.10

-40

-20

0

20

40

60

80

100

120

140

C[T ] / C [T =25°C]

jj

F=1MHz

V

=30mV

OSC

RMS

V =0V

R

V =2.7V

R

V =0.25V

R

T (°C)

j

Fig. 4: Relative variation of junction capacitance

versus junction temperature (typical values).

0

1

10

0.1

1.0

10.0

V (V)

R

Rs( )

Ω

F=100MHz

V

=100mV

T =25°C

OSC

RMS

j

Fig. 5: Serie resistance versus reverse voltage ap-

plied (typical values).

300

350

400

450

500

550

600

0

5

10

15

20

25

30

35

40

45

50

S(mm )

2

R

(°C/W)

th(j-a)

Fig. 6: Thermal resistance junction to ambient ver-

sus copper surface under each lead (printed circuit

board, epoxy FR4, Cu=35µm).

Fig. 7: PSpice parameters.

Diode parameters

Parameters

Value

Unit

Is

1.892e-8

A

N

1.256

Rs

0.62

Ω

Isr

8.090e-10

A

Cjo

5.178e-12

F

M

0.638

Vj

0.487

V

All others available parameters are set to default.

Ls = 1.5nH *

* Ls depends on package; this value is for SOD-323.