HAT2016R datasheet(3/8 Pages) RENESAS

номер детали	HAT2016R

подробное описание детали	Silicon N Channel Power MOS FET High Speed Power Switching

PDF	8 Pages

Scroll/Zoom	100%

производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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3 / 8 page

HAT2016R

Rev.10.00 Sep 07, 2005 page 3 of 7

Main Characteristics

Ambient Temperature

Ta (°C)

Power vs. Temperature Derating

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

Note 5:

When using the glass epoxy board

(FR4 40

× 40 × 1.6 mm)

4.0

1.0

2.0

3.0

100

150

200

100

0.3

0.1

0.03

0.01

0.1

0.3

100

10 V

6 V

3 V

4.5 V

3.5 V

VGS = 2.5 V

4 V

5 V

Tc = –25°C

75°C

25°C

1 Drive

Operation

Operation in

this area is

limited by RDS (on)

Pulse Test

VDS = 10 V

Pulse Test

Test Condition:

When using the glass epoxy board

(FR4 40

× 40 × 1.6 mm), PW ≤ 10 s

Ta = 25°C

1 shot Pulse

1 Drive Operation

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

0.5

0.1

0.2

0.3

0.4

0246810

2 A

1 A

ID = 5 A

0.2

0.5

0.2

0.1

0.02

0.05

0.01

0.005

10 V

VGS = 4 V

Pulse Test

Operation

(PW

≤ 10

Note

1 ms

100

µs

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