STV7801S datasheet(11/18 Pages) STMICROELECTRONICS

номер детали	STV7801S

подробное описание детали	PLASMA DATA POWER SWITCH

PDF	18 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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11 / 18 page

STV7801S

11/18

13 - APPLICATION DIAGRAM

The diodes for the recirculation current directly im-

pact the device performances. High Voltage di-

odes with recovery time inferior to 50ns are recom-

mended. Shorter recovery times will improve the

power efficiency of the application.

The rise and fall time of the output signal is adjust-

ed by the value of the inductance for a given ca-

pacitive load.

trise (tfall) is calculated by the following formula :

A 1nF bootstrap capacitor is recommended.

The bootstrap capacitor allows the output signal to

reach the Vpp value. For a given output level, the

power efficiency will be increased.

A 47

µF capacitor is recommended. The ripple on

the tank capacitor is reduced by increasing the

tank capacitor value.

Decoupling capacitors on the power supplies will

minimise the overshoots.

HL-Tr

Vpp

Out

+90V

100

µF/160V

CBoot

1nF

DM-HL

Vsslog

Vdd

Vssp

100pF

10K

µH

DM-LH

Vpp

H-Clmp

100pF

10K

L-Clmp

100pF

10K

LH-Tr

100pF

10K

µF/160V

(eg pins 1, 2, 42, 66,

107,108 of STV7610A)

to Vpp pins

of data driver ICs

ri se

πxLxCload

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