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FX3ASJ-3 датащи(PDF) 3 Page - Renesas Technology Corp

номер детали FX3ASJ-3
подробное описание детали  High-Speed Switching Use Pch Power MOS FET
PDF  7 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
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FX3ASJ-3 датащи(HTML) 3 Page - Renesas Technology Corp

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FX3ASJ-3
Rev.2.00
Aug 07, 2006
page 3 of 6
Performance Curves
Power Dissipation Derating Curve
Case Temperature Tc (°C)
Maximum Safe Operating Area
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
Gate-Source Voltage VGS (V)
On-State Resistance vs.
Drain Current (Typical)
Drain Current ID (A)
0
10
20
30
40
50
0
200
50
100
150
–2
–3
–10–1
–5
–7
–100
–2
–3
–5
–7
–101
–2
–3
–5
–7
–101 –2
–102
–3 –5 –7
–2
–103
–3 –5 –7
–2
–2 –3 –5 –7
–2
0
–2
–4
–6
–8
–10
0
–4
–8
–12
–16
–20
PD = 30W
VGS = –10V
–4V
–3V
–5V
–6V
0
–1.0
–2.0
–3.0
–4.0
–5.0
0
–2–4–6–8
–10
–6V
–4V
PD = 30W
VGS =–10V
–3V
–2.5V
–5V
0
0.4
0.8
1.2
1.6
2.0
–10–1
–100
–2 –3
–5 –7
–101
–2 –3
–5 –7
–10V
VGS = –4V
0
–4
–8
–12
–16
–20
0–2
–4
–6
–8
–10
ID = –6A
–1A
–3A
Tc = 25
°C
Pulse Test
Tc = 25
°C
Single Pulse
Tc = 25
°C
Pulse Test
Tc = 25
°C
Pulse Test
Tc = 25
°C
Pulse Test
100
µs
1ms
DC



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