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HAT2210R датащи(PDF) 5 Page - Renesas Technology Corp

номер детали HAT2210R
подробное описание детали  Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
PDF  12 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAT2210R датащи(HTML) 5 Page - Renesas Technology Corp

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HAT2210R, HAT2210RJ
Rev.3.00, Mar.15.2005, page 5 of 11
0.1 0.2
1
2
10 20
50 100
50
100
10
20
2
5
1
0.2
0.5
0.1
0.5
5
Drain Current
ID (A)
Forward Transfer Admittance vs.
Drain Current
VDS = 10 V
Pulse Test
25
°C
Tc = –25
°C
75
°C
Case Temperature
Tc
(
°C)
Static Drain to Source on State Resistance
vs. Temperature
50
40
30
20
10
-25
0
25
50
75
100 125 150
0
ID = 1 A, 2 A
1 A, 2 A, 5 A
VGS = 4.5 V
10 V
Pulse Test
5 A
0.1
0.3
1
3
10
30
100
100
10
20
2
50
5
1
0
5
10
15
20
25
30
2000
5000
10000
1000
100
200
500
50
40
30
20
10
0
20
16
12
8
4
4
8
12
16
20
0
20
50
10
2
1
5
0.1 0.2
1
2
10 20
50 100
20
50
10
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
VDD = 25 V
10 V
5 V
ID = 7.5 A
VDS
VGS
tr
td(on)
td(off)
Reverse Drain Current
IDR (A)
Body-Drain Diode Reverse
Recovery Time
Drain to Source Voltage VDS (V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge
Qg (nC)
Dynamic Input Characteristics
Drain Current
ID (A)
Switching Characteristics
tf
VGS = 10 V, VDD = 10 V
Rg =4.7
Ω, duty ≤ 1 %
0.5
5
100
di / dt = 100 A /
µs
VGS = 0, Ta = 25°C
VDD = 25 V
10 V
5 V



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