Rev.3.00 Jun 21, 2006 page 1 of 24

HSG2002

SiGe HBT

High Frequency Medium Power Amplifier

REJ03G0444-0300

Rev.3.00

Jun 21, 2006

Features

• High Transition Frequency

• Low Distortion and Excellent Linearity

P1dB at output = +25 dBm typ. f = 5.8 GHz

• High Collector to Emitter Voltage

• Ideal for 2 GHz, 5 GHz Band applications. e.g WLAN, Digital cordless phone.

Outline

Renesas Package code: PWQN0008ZA-A

(Package name: HWQFN-8 <TNP-8TV>)

1. Collector

2. Collector

3. Collector

4. Emitter

5. Emitter

6. Base

7. Emitter

8. Emitter

9. Emitter

1

3

7

6

5

2

4

8

9

1

3

7 6

5

2

4

8

9

2002

Note:

Marking is “2002”.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

12

V

Collector to emitter voltage

5

V

Emitter to base voltage

1.5

V

Collector current

500

mA

Collector power dissipation

Pc

1.4

Note

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

Value on PCB (40 x 40 x 1.0mm)