HSG2001VF datasheet(2/25 Pages) RENESAS

номер детали	HSG2001VF

подробное описание детали	SiGe NPN Epitaxial High Frequency Medium Power Amplifier

PDF	25 Pages

Scroll/Zoom	100%

производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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2 / 25 page

HSG2001

Rev.2.00, Apr.20.2004, page 2 of 24

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

DC current transfer ratio

hFE

100

150

200



VCE = 2 V, IC = 50 mA

Collector output capacitance

Cob



0.95

1.2

VCB = 2 V, IE = 0, f = 1 MHz

Reverse Transfer

Capacitance

Cre



0.5



VCB = 2 V, IE = 0, f = 1 MHz

emitter grounded

Transition Frequency



GHz

VCE = 3 V, IC = 60 mA, f = 1 GHz

Transition Frequency



GHz

VCE = 3 V, IC = 40 mA, f = 1 GHz

Maximum Available Gain

MAG



VCE = 3 V, IC = 40 mA, f = 1.8 GHz,

Power Gain



VCE = 3 V, ICq = 40 mA, f = 1.8 GHz,

Pin=+7dBm

Noise Figure



0.9



VCE = 3 V, IC =10 mA, f = 1.8 GHz

Noise Figure



1.1



VCE = 3 V, IC =10 mA, f = 2.4 GHz

1dB Compression Point at

output

P1dB



+19



dBm

VCE = 3 V, ICq = 40 mA, f = 1.8 GHz

1dB Compression Point at

output

P1dB



+20



dBm

VCE = 3.6 V, ICq = 40 mA,

f = 2.4 GHz

Third Order Intercept Point at

output

OIP3



+30



dBm

VCE = 3 V, ICq = 40 mA,

f = 1.8 GHz,

∆f = 1 MHz

Third Order Intercept Point at

output

OIP3



+31



dBm

VCE = 3.6 V, ICq = 40 mA,

f = 2.4 GHz,

∆f = 1 MHz

Saturation Output Power

Po(sat)



+23



dBm

VCE = 3 V, ICq = 40 mA

f = 1.8 GHz, Pin = +18 dBm

Saturation Output Power

Po(sat)



+23



dBm

VCE = 3.6 V, ICq = 40 mA

f = 2.4 GHz, Pin = +18 dBm

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