FS2UM-12 datasheet(3/5 Pages) RENESAS

3 / 5 page

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS2UM-12

HIGH-SPEED SWITCHING USE

V (BR) DSS

V (BR) GSS

IGSS

IDSS

VGS (th)

rDS (ON)

VDS (ON)

yfs

Ciss

Coss

Crss

td (on)

td (off)

VSD

Rth (ch-c)

µA

Ω

°C/W

600

±30

—

0.8

—

5.0

1.3

300

1.5

—

±10

6.4

—

2.0

2.08

ID = 1mA, VGS = 0V

IG =

±100µA, VDS = 0V

VGS =

±25V, VDS = 0V

VDS = 600V, VGS = 0V

ID = 1mA, VDS = 10V

ID = 1A, VGS = 10V

ID = 1A, VDS = 10V

VDS = 25V, VGS = 0V, f = 1MHz

VDD = 200V, ID = 1A, VGS = 10V, RGEN = RGS = 50

Ω

IS = 1A, VGS = 0V

Channel to case

100

200

150

100

101

100

10–1

10–2

23 5 7 101 23 5 7 102 23 5 7 103 2

tw=10µs

1ms

10ms

100µs

TC = 25°C

Single Pulse

2.0

1.6

1.2

0.8

0.4

VGS=20V

10V

TC = 25°C

Pulse Test

1020304050

PD = 60W

VGS = 20V

10V

TC = 25°C

Pulse Test

POWER DISSIPATION DERATING CURVE

CASE TEMPERATURE TC (°C)

MAXIMUM SAFE OPERATING AREA

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE VDS (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE VDS (V)

ELECTRICAL CHARACTERISTICS (Tch = 25

°C)

Drain-source breakdown voltage

Gate-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Symbol

Unit

Parameter

Test conditions

Limits

Min.

Typ.

Max.

PERFORMANCE CURVES

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