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HTT1115E датащи(PDF) 3 Page - Renesas Technology Corp

номер детали HTT1115E
подробное описание детали  Silicon NPN Epitaxial Twin Transistor
PDF  9 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HTT1115E датащи(HTML) 3 Page - Renesas Technology Corp

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HTT1115E
Rev.2.00 Aug 10, 2005 page 3 of 8
Main Characteristics (Q1)
0
0.4
0.6
1.0
Typical Forward Transfer Characteristics
01
2
3
4
Typical Output Characteristics
Collector to Emitter Voltage VCE (V)
Base to Emitter Voltage VBE (V)
0.2
0.8
VCE = 1 V
20
30
40
50
10
10
20
30
40
50
IB = 50 µA
100
µA
150
µA
200
µA
250
µA
300
µA
350
µA
400
µA
450
µA
100
10
100
200
0
1
20
Collector Current IC (mA)
DC Current Transfer Ratio vs.
Collector Current
25
50
V
= 1 V
CE
Collector to Base Voltage VCB (V)
1.2
2.0
Reverse Transfer Capacitance vs.
Collector to Base Voltage
0.1
0.2
0.3
0.4
0.5
0
0.4
0.8
1.6
IE = 0
f = 1 MHz
110
100
Collector Current IC (mA)
S21 Parameter vs. Collector Current
4
8
12
16
20
0
25
20
50
f = 900 MHz
12
5
10
20
50
100
0
4
8
12
16
20
Collector Current IC (mA)
Gain Bandwidth Product vs.
Collector Current
VCE = 1V
VCE = 2 V
f = 1 GHz
VCE = 2 V
VCE = 1 V



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