2SH28 datasheet(4/10 Pages) RENESAS

номер детали	2SH28

подробное описание детали	Silicon N Channel IGBT High Speed Power Switching

PDF	10 Pages

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производитель	RENESAS [Renesas Technology Corp]

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2SH28

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Collector to Emitter voltage

CES

600

Gate to Emitter voltage

GES

±20

Collector current

Collector peak current

ic(peak)

Collector dissipation

Note1

Channel temperature

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Value at Tc = 25

°C

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero gate voltage collector

current

CES

—

100

µAV

CE = 600V, VGE = 0

Gate to emitter leak current

GES

——

±1

µAV

GE = ± 20 V, VCE = 0

Gate to emitter cutoff voltage

GE(off)

6.0

—

8.0

C = 20 mA, VCE = 10V

Collector to emitter saturation

voltage

CE(sat)

—

2.1

2.6

C = 20 A, VGE = 15V

Input capacitance

Cies

—

1200

—

CE = 10V,

GE = 0

f = 1MHz

Switching time

—

150

—

C = 20 A

—

230

—

L = 15 Ω

—

300

600

GS = ±15V

off

—

450

900

Rg = 50

Ω

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