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2SC5554 датащи(PDF) 4 Page - Renesas Technology Corp

номер детали 2SC5554
подробное описание детали  Silicon NPN Epitaxial VHF / UHF wide band amplifier
PDF  10 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5554 датащи(HTML) 4 Page - Renesas Technology Corp

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2SC5554
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
9V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
20
mA
Collector power dissipation
Pc
80
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Collector cutoff current
I
CBO
——
10
µAV
CB = 15V , IE = 0
Collector cutoff current
I
CEO
——
1
mA
V
CE = 9V , RBE = ∞
Emitter cutoff current
I
EBO
——
10
µAV
EB = 1.5V , IC = 0
DC current transfer ratio
h
FE
50
120
250
V
V
CE = 1V , IC = 5mA
Collector output capacitance
Cob
—
0.6
0.9
pF
V
CB = 1V , IE = 0
f = 1MHz
Gain bandwidth product
f
T
3.5
7
—
GHz
V
CE = 1V , IC = 5mA
Power gain
PG
9
12
—
dB
V
CE = 1V, IC = 5mA
f = 900MHz
Noise figure
NF
—
1.4
3
dB
V
CE = 1V, IC = 5mA
f = 900MHz



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