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2SC5050 датащи(PDF) 4 Page - Renesas Technology Corp

номер детали 2SC5050
подробное описание детали  Silicon NPN Epitaxial
PDF  7 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5050 датащи(HTML) 4 Page - Renesas Technology Corp

  2SC5050 Datasheet HTML 1Page - Renesas Technology Corp 2SC5050 Datasheet HTML 2Page - Renesas Technology Corp 2SC5050 Datasheet HTML 3Page - Renesas Technology Corp 2SC5050 Datasheet HTML 4Page - Renesas Technology Corp 2SC5050 Datasheet HTML 5Page - Renesas Technology Corp 2SC5050 Datasheet HTML 6Page - Renesas Technology Corp 2SC5050 Datasheet HTML 7Page - Renesas Technology Corp  
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2SC5050
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
15
V
Collector to emitter voltage
V
CEO
8V
Emitter to base voltage
V
EBO
1.5
V
Collector current
I
C
50
mA
Collector power dissipation
P
C
150
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
15
——V
I
C = 10 µA, IE = 0
Collector cutoff current
I
CBO
—
—
10
µA
V
CB = 12 V, IE = 0
I
CEO
——
1
mA
V
CE = 8 V, RBE =
Emitter cutoff current
I
EBO
—
—
10
µA
V
EB = 1.5 V, IC = 0
DC current transfer ratio
h
FE
50
120
250
V
CE = 5 V, IC = 20 mA
Collector output capacitance
Cob
—
0.6
1.1
pF
V
CB = 5 V, IE = 0, f = 1 MHz
Gain bandwidth product
f
T
8.0
11.0
—
GHz
V
CE = 5 V, IC = 20 mA
S21 Parameter
|S21|
—
13.5
—
dB
V
CE = 5 V, IC = 20 mA,
f = 1000 MHz
Power gain
PG
11.0
14.0
—
dB
V
CE = 5 V, IC = 20 mA,
f = 900 MHz
Noise figure
NF
—
1.1
2.0
dB
V
CE = 5 V, IC = 5 mA,
f = 900 MHz
See characteristic curves of 2SC4926.



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