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HAF2017 датащи(PDF) 4 Page - Renesas Technology Corp

номер детали HAF2017
подробное описание детали  Silicon N Channel Power MOSFET Power Switching
PDF  9 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HAF2017 датащи(HTML) 4 Page - Renesas Technology Corp

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HAF2017(L), HAF2017(S)
Rev.2.00, Apr.13.2004, page 4 of 8
Main Characteristics
Drain to Source voltage VDS (V)
500
100
200
20
50
10
2
5
1
0.5
0.3
0.5
1
2
5
10
20
50 100
100
µ
s
1 ms
PW
=
10
ms
DC
Operation
(Tc
=
25
°C
)
Ta = 25
°C
Maximum Safe Operation Area
50
40
30
20
10
0
24
6
8
10
10 V
8 V
VGS = 3.5 V
6 V
5 V
4 V
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Pulse Test
50
40
30
20
10
04
8
10
6
2
Gate to Source Voltage VGS (V)
Typical Transfer Characteristics
VDS = 10 V
Pulse Test
Operation
in this area
is limited RDS(on)
Thermal shut down
operation area
80
60
40
20
0
50
100
150
200
Case Temperature Tc (
°C)
Power vs. Temperature Derating
Tc = -25
°C
25
°C
75
°C
1.0
0.8
0.6
0.4
0.2
02
4
6
8
10
10 A
5 A
ID = 20 A
Pulse Test
Gate to Source Voltage
VGS (V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
0.1
0.3
1
3
10
100
30
300
1000
100
10
3
30
1
VGS = 4.5 V
Pulse Test
Drain Current D (A)
Static Drain to Source State Resistance
vs. Drain Current
VGS = 10 V
I



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