HAF1002L datasheet(2/9 Pages) RENESAS

номер детали	HAF1002L

подробное описание детали	Silicon P Channel MOS FET Series Power Switching

PDF	9 Pages

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производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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HAF1002(L), HAF1002(S)

Rev.2.00 Sep 07, 2005 page 2 of 8

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

VDSS

–60

VGSS

–16

Gate to source voltage

VGSS

Drain current

–15

Drain peak current

ID (pulse)

Note 1

–30

Body-drain diode reverse drain current

IDR

–15

Channel dissipation

Pch

Note 2

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25

°C

Typical Operation Characteristics

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

VIH

–3.5

—

Input voltage

VIL

—

–1.2

IIH1

—

–100

µA

Vi = –8 V, VDS = 0

IIH2

—

–50

µA

Vi = –3.5 V, VDS = 0

Input current

(Gate non shut down)

IIL

—

–1

µA

Vi = –1.2 V, VDS = 0

IIH (sd) 1

—

–0.8

—

Vi = –8 V, VDS = 0

Input current

(Gate shut down)

IIH (sd) 2

—

–0.35

—

Vi = –3.5 V, VDS = 0

Shut down temperature

Tsd

—

175

—

°C

Channel temperature

Gate operation voltage

VOP

–3.5

—

–13

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