2SJ484 datasheet(2/7 Pages) RENESAS

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2SJ484

Rev.3.00 Sep 07, 2005 page 2 of 6

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Drain to source voltage

VDSS

–30

Gate to source voltage

VGSS

±20

Drain current

–2

Drain peak current

ID (pulse)

Note 1

–4

Body to drain diode reverse drain current

IDR

–2

Channel dissipation

Pch

Note 2

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Notes: 1. PW

≤ 100 µs, duty cycle ≤ 10%

2. When using the aluminium ceramic board (12.5

× 20 × 0.7 mm)

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

–30

—

ID = –10 mA, VGS = 0

Gate to source breakdown voltage

V (BR) GSS

±20

—

IG =

±100 µA, VDS = 0

Zero gate voltage drain current

IDSS

—

–10

µA

VDS = –30 V, VGS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS =

±16 V, VDS = 0

Gate to source cutoff voltage

VGS (off)

–1.0

—

–2.0

ID = –1 mA, VDS = –10 V

RDS (on)

—

0.18

0.23

Ω

ID = –1 A, VGS = –10 V

Note 3

Static drain to source on state resistance

RDS (on)

—

0.3

0.45

Ω

ID = –1 A, VGS = –4 V

Note 3

Forward transfer admittance

|yfs|

1.2

2.0

—

ID = –1 A, VDS = –10 V

Note 3

Input capacitance

Ciss

—

230

—

Output capacitance

Coss

—

140

—

Reverse transfer capacitance

Crss

—

VDS = –10 V

VGS = 0

f = 1 MHz

Turn-on delay time

td (on)

—

Rise time

—

Turn-off delay time

td (off)

—

Fall time

—

VGS = –10 V

ID = –1 A

RL = 30

Ω

Body to drain diode forward voltage

VDF

—

–0.95

—

IF = –2 A, VGS = 0

Body to drain diode reverse recovery time

trr

—

IF = –2 A, VGS = 0

diF/dt = 50 A/

µs

Note:

3. Pulse test

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