2SJ451 datasheet(2/7 Pages) RENESAS

номер детали	2SJ451

подробное описание детали	Silicon P Channel MOS FET

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2SJ451

REJ03G864-0400 Rev.4.00 Sep 07, 2007

Page 2 of 6

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V (BR) DSS

–20

—

ID = –100

µA, VGS = 0

Gate to source breakdown voltage

V (BR) GSS

±20

—

IG =

±100 µA, VDS = 0

Zero gate voltage drain current

IDSS

—

–1.0

µA

VDS = –16 V, VGS = 0

Gate to source leak current

IGSS

—

±2.0

µA

VGS =

±16 V, VDS = 0

Gate to source cutoff voltage

VGS (off)

–0.5

—

–1.5

ID = –10

µA, VDS = –5 V

RDS (on) 1

—

2.3

3.5

Ω

ID = –100 mA, VGS = –4 V

Note 2

Static drain to source on state resistance

RDS (on) 2

—

5.0

9.0

Ω

ID = –40 mA, VGS = –2.5 V

Note 2

Forward transfer admittance

|yfs|

0.13

0.23

—

ID = –100 mA, VDS = –10 V

Note 2

Input capacitance

Ciss

—

2.4

—

Output capacitance

Coss

—

Reverse transfer capacitance

Crss

—

0.6

—

VDS = –10 V

VGS = 0

f = 1 MHz

Turn-on delay time

td (on)

—

170

—

Rise time

—

680

—

Turn-off delay time

td (off)

—

3.0

—

µs

Fall time

—

2.8

—

µs

ID = –0.1 A

VGS = –10 V

RL = 100

Ω

Note:

2. Pulse test

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