2SJ181L datasheet(3/8 Pages) RENESAS

номер детали	2SJ181L

подробное описание детали	Silicon P Channel MOS FET

PDF	8 Pages

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производитель	RENESAS [Renesas Technology Corp]

домашняя страница	http://www.renesas.com

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2SJ181(L), 2SJ181(S)

Rev.2.00 Sep 07, 2005 page 3 of 7

Main Characteristics

Case Temperature

Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage

VDS (V)

Typical Output Characteristics

Gate to Source Voltage

VGS (V)

Typical Transfer Characteristics

–1.0

–0.2

–0.4

–0.6

–0.8

–10

–20

–30

–40

–50

–0.5

–0.1

–0.2

–0.3

–0.4

–2–4–6–8

–10

Tc = –25°C

25°C

75°C

100

150

200

VDS = –20 V

Pulse Test

–10 V

–4.5 V

–5 V

VGS = –4 V

Pulse Test

Drain to Source Voltage

VDS (V)

Maximum Safe Operation Area

–3

–1

–0.3

–0.1

–0.01

–0.03

–10

–20

–50 –100 –200

–500 –1000

–10

Ta = 25°C

µs

= 10

shot)

Oper

ation

(Tc

= 25°C)

1 ms

100

µs

Operation in

this area is

limited by RDS (on)

Gate to Source Voltage

VGS (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

–20

–4

–8

–12

–16

–4

–8

–12

–16

–20

Pulse Test

ID = –0.5 A

–0.1 A

–0.2 A

Drain Current

ID (A)

Static Drain to Source on State Resistance

vs. Drain Current

100

–0.1

–0.5

–1

–0.02

–0.2

–2

–0.05

500

200

VGS = –10 V

–15 V

Pulse Test

–6 V

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