Preliminary Data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

August 2008

Rev 1

1/12

12

STB180N10F3

STP180N10F3

N-channel 100 V, 4.0 m

Ω, 120 A STripFET™ Power MOSFET

Features

Application

Description

This n-channel enhancement mode Power

MOSFET is the latest refinement of

STMicroelectronics unique “single feature size”

strip-based process with less critical alignment

steps and therefore a remarkable manufacturing

reproducibility. The resulting transistor shows

extremely high packing density for low on

resistance, rugged avalanche characteristics and

low gate charge.

Figure 1.

Internal schematic diagram

Type

STB180N10F3

100 V

4.5 m

Ω

1.

Value limited by wire bonding

STP180N10F3

100 V

4.8 m

Ω

1

3

TO-220

1

2

3

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB180N10F3

180N10F3

Tape and reel

STP180N10F3

180N10F3

TO-220

Tube

www.st.com