STB80NF03L-04T4 datasheet(3/11 Pages) STMICROELECTRONICS

номер детали	STB80NF03L-04T4

подробное описание детали	N-CHANNEL 30V - 0.0035 W - 80A D2PAK/I2PAK/TO-220 STripFET??II POWER MOSFET

PDF	11 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

Logo

3 / 11 page

3/11

STB80NF03L-04/-1/STP80NF03L-04

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

(

•)Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

Rise Time

VDD = 15 V

ID = 40 A

RG = 4.7 Ω

VGS = 4.5 V

(Resistive Load, Figure 3)

270

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =24V ID =80 A VGS=4.5V

110

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

Turn-off Delay Time

Fall Time

VDD = 15 V

ID = 40 A

RG = 4.7Ω,

VGS = 4.5 V

(Resistive Load, Figure 3)

110

tr(Voff)

Off-Voltage Rise Time

Fall Time

Cross-over Time

Vclamp = 24 V

ID = 80 A

RG = 4.7Ω

VGS = 4.5 V

(Inductive Load, Figure 5)

125

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (•)

Source-drain Current

Source-drain Current (pulsed)

320

VSD (*)

Forward On Voltage

ISD = 80 A

VGS = 0

1.5

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD = 80 A

di/dt = 100A/µs

VDD = 20 V

Tj = 150°C

(see test circuit, Figure 5)

0.15

µC

ELECTRICAL CHARACTERISTICS (continued)

Safe Operating Area

Thermal Impedance

STB80NF03L-04T4 датащи(PDF) 3 Page - STMicroelectronics

STB80NF03L-04T4 датащи(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11

датащи скачать

ссылки URL