2SD667 datasheet(2/6 Pages) RENESAS

номер детали	2SD667

подробное описание детали	Silicon NPN Epitaxial

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2SD667, 2SD667A

Rev.2.00 Aug 10, 2005 page 2 of 5

Electrical Characteristics

(Ta = 25°C)

2SD667

2SD667A

Item

Symbol

Min

Typ

Max

Min

Typ

Max

Unit

Test conditions

Collector to base

breakdown voltage

V(BR)CBO

120

—

120

—

IC = 10

µA, IE = 0

Collector to emitter

breakdown voltage

V(BR)CEO

—

100

—

IC = 1 mA, RBE =

∞

Emitter to base

breakdown voltage

V(BR)EBO

—

IE = 10

µA, IC = 0

Collector cutoff current

ICBO

—

µA

VCB = 100 V, IE = 0

DC current transfer ratio

hFE1*

—

320

—

200

VCE = 5 V,

IC = 150 mA*

hFE2

—

VCE = 5 V,

IC = 500 mA*

Collector to emitter

saturation voltage

VCE(sat)

—

IC = 500 mA,

IB = 50 mA*

Base to emitter voltage

VBE

—

1.5

—

1.5

VCE = 5 V,

IC = 150 mA*

Gain bandwidth product

—

140

—

140

—

MHz

VCE = 5 V,

IC = 150 mA*

Collector output

capacitance

Cob

—

VCB = 10 V, IE = 0,

f = 1 MHz

Notes: 1. The 2SD667 and 2SD667A are grouped by hFE1 as follows.

2. Pulse test

2SD667

60 to 120

100 to 200

160 to 320

2SD667A

60 to 120

100 to 200

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