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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SD467 датащи(PDF) 2 Page - Renesas Technology Corp |
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2SD467 датащи(HTML) 2 Page - Renesas Technology Corp |
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2 / 6 page  2SD467 Rev.2.00 Aug 10, 2005 page 2 of 5 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 25 — — V IC = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 20 — — V IC = 1 mA, RBE = ∞ Emitter to base breakdown voltage V(BR)EBO 5 — — V IE = 10 µA, IC = 0 Collector cutoff current ICBO — — 1.0 µA VCB = 20 V, IE = 0 DC current transfer ratio hFE* 1 85 — 240 VCE = 1 V, IC = 0.15 A (Pulse test) Collector to emitter saturation voltage VCE(sat) — 0.19 0.5 V IC = 0.5 A, IB = 0.05 A (Pulse test) Base to emitter voltage VBE — 0.76 1.0 V VCE = 1 V, IC = 0.15 A (Pulse test) Gain bandwidth product fT — 280 — MHz VCE = 1 V, IC = 0.15 A (Pulse test) Collector output capacitance Cob — 12 — pF VCB = 10 V, IE = 0, f = 1 MHz Note: 1. The 2SD467 is grouped by hFE as follows. B C 85 to170 120 to 240 |
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