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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5945 датащи(PDF) 2 Page - Renesas Technology Corp |
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2SC5945 датащи(HTML) 2 Page - Renesas Technology Corp |
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2 / 36 page  2SC5945 Rev.3.00 Aug 03, 2006 page 2 of 35 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions DC current transfer ratio hFE 110 150 190 VCE = 3 V, IC = 100 mA Reverse Transfer Capacitance Cre 1.0 pF VCB = 2 V, IE = 0, f = 1 MHz, emitter grounded Transition Frequency fT 15.5 GHz VCE = 3 V, IC = 100 mA, f = 1 GHz Maximum Available Gain MAG 9 dB VCE = 3 V, IC = 100 mA, f = 2.4 GHz Power Gain PG 4 6 dB Power Added Efficiency PAE 30 40 % VCE = 3.3 V, ICq = 100 mA, f = 2.4 GHz, Pin= +20 dBm 1dB Compression Point at output P1dB +24 dBm VCE = 3.3 V, ICq = 100 mA, f = 2.4 GHz 1dB Compression Point at output P1dB +26 dBm VCE = 3.3 V, ICq = 250 mA, f = 2.4 GHz Main Characteristics 500 400 300 200 100 12 3 4 5 0 IB = 0.5 mA 0 50 100 150 200 1.5 1.0 0.5 1.5 mA 2.5 mA 3.5 mA 1.0 mA 2.0 mA 3.0 mA 4.0 mA Collector to Emitter Voltage VCE (V) Typical Output Characteristics Collector Power Dissipation Curve Ambient Temperature Ta (°C) *(40 x 40 x 1 mm) Value on PCB |
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