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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SC5624 датащи(PDF) 2 Page - Renesas Technology Corp |
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2SC5624 датащи(HTML) 2 Page - Renesas Technology Corp |
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2 / 7 page  2SC5624 Rev.3.00, Feb.21.2005, page 2 of 6 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Collector cutoff current ICBO — — 1 µA VCB = 8 V, IE = 0 Collector cutoff current ICEO — — 1 µA VCE = 3 V, RBE = ∞ Emitter cutoff current IEBO — — 10 µA VEB = 0.8 V, IC = 0 DC current transfer ratio hFE 80 120 160 VCE = 2 V, IC = 20 mA Collector output capacitance Cob — 0.3 0.6 pF VCB = 2 V, IE = 0, f = 1 MHz Gain bandwidth product fT 25 28 — GHz VCE = 2 V, IC = 30 mA, f = 2 GHz Power gain PG 14 18 — dB VCE = 2 V, IC = 30 mA, f = 1.8 GHz Noise figure NF — 1.2 1.6 dB VCE = 2 V, IC = 5 mA, f = 1.8 GHz Main Characteristics 200 150 100 50 0 50 100 150 200 10 100 200 0 1 20 100 Ambient Temperature Ta (°C) Maximum Collector Dissipation Curve Collector Current IC (mA) DC Current Transfer Ratio vs. Collector Current 25 50 V = 2 V CE |
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