M16C/26 Group

Rev.1.00

2004.6.10

page 21 of 37

REJ09B0176-0100Z

5.4 Flash Memory Version Electrical Characteristics

Note 1: When not otherwise specified, Vcc = 2.7 to5.5V; Topr = 0 to 60 °C.

Note 2: VCC = 5V; TOPR = 25 °C.

Note 3: Definition of E/W cycle: Each block may be written to a variable number of times - up to a maximum of the total

number of distinct word addresses - for every block erase. Performing multiple writes to the same address before

an erase operation is prohibited.

Note 4: Maximum number of E/W cycles for which opration is guaranteed.

Note 5: Topr = 55°C.

Note 6: When not otherwise specified, Vcc = 2.7 to 5.5V; Topr = -40 to 85°C (D7, U7) / -20 to 85°C (D9, U9).

Note 7: Table18.5 applies for Block A or B E/W cycles > 1000. Otherwise, use Table 18.4.

Note 8: To reduce the number of E/W cycles, a block erase should ideally be performed after writing as many different

word addresses (only one time each) as possible. It is important to track the total number of block erases.

Note 9: Should erase error occur during block erase, attempt to execute clear status register command, then clock erase

command at least three times until erase error disappears.

Note 10: When Block A or B E/W cycles exceed 100 (D7, D9, U7, U9), select one wait state per block access. When FMR

17 is set to "1", one wait state is inserted per access to Block A or B - regardless of the value of PM17. Wait state

insertion during access to all other blocks, as well as to internal RAM, is controlled by PM17 - regardless of the

setting of FMR17.

Note 11: Customers desiring E/W failure rate information should contact their Renesas technical support representative.

Word program time (Vcc=5.0V, Topr=25°C)

Block erase time

75

0.2

600

9

µs

s

Parameter

Standard

Min.

Typ.

(Note 2)

Max

Unit

Symbol

–

–

0.49

s

0.7

9

s

1.29

s

2Kbyte block

8Kbyte block

16Kbyte block

32Kbyte block

–

Erase/Write cycle (Note 3)

100(Note 4)

cycle

td(SR-ES)

–

Time delay from Suspend Request until Erase Suspend

Data retention time (Note 5)

ms

year

8

20

Word program time (Vcc=5.0V, Topr=25°C)

Block erase time(Vcc=5.0V, Topr=25°C)

100

µs

Parameter

Standard

Min.

Typ.

(Note 2)

Max

Unit

Symbol

–

–

0.3

s

(2Kbyte block)

–

Erase/Write cycle (Note 3, 8, 9)

cycle

td(SR-ES) Time delay from Suspend Request until Erase Suspend

ms

8

Table 16.4. Flash Memory Version Electrical Characteristics (Note 1) 100E/W cycle products (D3, D5, U3, U5))

Table 16.5. Flash Memory Version Electrical Characteristics (Note 6) 10000 E/W cycle products (D7, D9, U7, U9)

[blockA and block B(Note 7)]

Erase suspend

request

(interrupt request)

FMR46

td(SR-ES)

Flash program, erase voltage

Flash read operation voltage

Table 16.6. Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics