2SC2620 datasheet(2/8 Pages) RENESAS

номер детали	2SC2620

подробное описание детали	Silicon NPN Epitaxial Planar

PDF	8 Pages

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производитель	RENESAS [Renesas Technology Corp]

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2SC2620

Rev.2.00 Aug 10, 2005 page 2 of 7

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

—

IC = 10

µA, IE = 0

Collector to emitter breakdown voltage

V(BR)CEO

—

IC = 1 mA, RBE =

∞

Emitter to base breakdown voltage

V(BR)EBO

—

IE = 10

µA, IC = 0

Collector cutoff current

ICBO

—

0.5

µA

VCB = 10 V, IC = 0

Emitter cutoff current

IEBO

—

0.5

µA

VEB = 2 V, IC = 0

DC current transfer ratio

hFE*

—

200

VCE = 6 V, IC = 1 mA

Collector to emitter saturation voltage

VCE(sat)

—

0.17

—

IC = 20 mA, IB = 4 mA

Base to emitter voltage

VBE

—

0.72

—

VCE = 6 mA, IC = 1 mA

Gain bandwidth product

—

940

—

MHz

VCE = 6 V, IC = 5 mA

Collector output capacitance

Cob

—

0.9

—

VCB = 10 V, IE = 0, f = 1 MHz

Note:

1. The 2SC2620 is grouped by hFE as follows.

Grade

Mark

hFE

60 to 120

100 to 200

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