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2SC2545 датащи(PDF) 2 Page - Renesas Technology Corp

номер детали 2SC2545
подробное описание детали  Silicon NPN Epitaxial
PDF  6 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC2545 датащи(HTML) 2 Page - Renesas Technology Corp

  2SC2545 Datasheet HTML 1Page - Renesas Technology Corp 2SC2545 Datasheet HTML 2Page - Renesas Technology Corp 2SC2545 Datasheet HTML 3Page - Renesas Technology Corp 2SC2545 Datasheet HTML 4Page - Renesas Technology Corp 2SC2545 Datasheet HTML 5Page - Renesas Technology Corp 2SC2545 Datasheet HTML 6Page - Renesas Technology Corp  
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2SC2545, 2SC2546, 2SC2547
Rev.3.00 Aug 10, 2005 page 2 of 5
Electrical Characteristics
(Ta = 25°C)
2SC2545
2SC2546
2SC2547
Item
Symbol
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
60
90
120
V
IC = 10
µA, I
E = 0
Collector to emitter
breakdown voltage
V(BR)CEO
60
90
120
V
IC = 1 mA,
RBE =
Emitter to base breakdown
voltage
V(BR)EBO
5
5
5
V
IE = 10
µA, I
C = 0
Collector cutoff current
ICBO
0.1
0.1
0.1
µA
VCB = 50 V, IE = 0
Emitter cutoff current
IEBO
0.1
0.1
0.1
µA
VEB = 2 V, IC = 0
DC current transfer ratio
hFE*
1
250
1200
600
1200
250
800
VCE = 12 V,
IC = 2 mA
Collector to emitter
saturation voltage
VCE(sat)
0.2
0.2
0.2
V
IC = 10 mA,
IB = 1 mA
Base to emitter voltage
VBE
0.6
0.6
0.6
V
VCE = 12 V,
IC = 2 mA
Gain bandwidth product
fT
90
90
90
MHz
VCE = 12 V,
IC = 2 mA
Collector output capacitance
Cob
3.0
3.0
3.0
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Noise voltage referred input
en
0.5
0.5
0.5
nV/
√Hz
VCE = 6V,
IC = 10 mA,
f = 1 kHz,
Rg = 0,
∆f = 1Hz
Note:
1. The 2SC2545 and 2SC2547 are grouped by hFE as follows.
D
E
F
2SC2545
400 to 800
600 to 1200
2SC2547
250 to 500
400 to 800



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