STS2DNF30L datasheet(2/8 Pages) STMICROELECTRONICS

номер детали	STS2DNF30L

подробное описание детали	Dual N-channel 30V - 0.09ohm - 3A SO-8 STripFET TM Power MOSFET

PDF	8 Pages

Scroll/Zoom	100%

производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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STS2DNF30L

2/8

THERMAL DATA

(*) Mounted on FR-4 board (t

[ 10 sec.)

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

ON (1)

DYNAMIC

Rthj-amb

Tstg

(*)Thermal Resistance Junction-ambient

Single Operation

Dual Operating

Thermal Operating Junction-ambient

Storage Temperature

62.5

150

-55 to 175

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 18V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

1.7

2.5

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 1 A

VGS = 5 V

ID = 1 A

0.09

0.13

0.011

0.15

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS>ID(on)xRDS(on)max ID=2.5A

2.5

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

121

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